Single-atom-thick two-dimensional semiconductor material used as the channel material in the reported transistors.
A KAIST-led team grew a single MoS2 crystal at its assigned site in over 99% of 400 patterned regions, per a Nature paper. The team has not built a stacked processor or measured any speed or energy gain.
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Researchers reporting in Nature pin each MoS2 crystal's nucleus to its pattern's centre with an oxygen etching flux, reaching mobilities up to 117 cm2/Vs. In principle, a 2D-semiconductor maker can now decide where each single crystal starts when drawing the pattern.
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The LightTok chip senses, stores and computes in the same pixel, and its authors report 87.3% recognition accuracy with a tenfold energy gain on turning light into tokens across an array of 1,024 pixels.
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Researchers at Taiwan's NYCU oxidised a 0.3-nanometre aluminium film into a 0.42-nanometre buffer that lets a very thin gate insulator form on molybdenum disulfide without leaking, and the flow they used still needs scaling.
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UNIST reports contact resistance down tenfold on atom-thin MoS2 by keeping hardened photoresist off the surface entirely. The device number is published; the yield number is not.
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