Gate dielectrics

Oxidising 0.3 nanometres of aluminium gives MoS2 a gate stack equivalent to 1nm of silicon dioxide

Researchers at Taiwan's NYCU oxidised a 0.3-nanometre aluminium film into a 0.42-nanometre buffer that lets a very thin gate insulator form on molybdenum disulfide without leaking, and the flow they used still needs scaling.