Nebraska Center for Materials and Nanoscience

Hafnium oxide holds intrinsic antiferroelectric order in films 0.6 nanometers thick

Nebraska physicists report in Science that hafnium oxide is intrinsically antiferroelectric, holding that order in films 0.6 nanometers thick. The lead-free compound, common in electronics, gains a firmer claim on capacitor, memory and cooling uses, so far on evidence from single-crystal films.