project

Tellurium-hyperdoped silicon photodiode

The reported device: silicon hyperdoped with tellurium, micro-textured with pyramids and backed by a gold mirror, achieving ~85% absorption, 2.3% peak EQE and 4x10^10 Jones detectivity at room temperature.

Known aliases

hyperdoped Si SWIR photodiode
Te-hyperdoped silicon photodiode

Relationships

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Current clusters

science1 distinct publisher

A tellurium-doped silicon SWIR diode absorbs 85% of the light and returns 2.3% of it

Complutense researchers report a record 4x10^10 Jones at room temperature for hyperdoped silicon. The absorption problem now looks solved; carrier collection does not.

Publishers:phys.org

Reality

Evidence62
Adoption8
Hype gap+42
Incentives66